samsung semiconductorirf中文数据手册-datasheet5电子元器件查询网

对比	型号	厂商	描述	价格
对比	IRFR9012-T1	Samsung Semiconductor	Power Field-Effect Transistor, 4.5A I(D), 50V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3	获取价格 -	请求模型数据手册替代料
对比	IRFS624	Samsung Semiconductor	Power Field-Effect Transistor, 3.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN	获取价格 -	请求模型数据手册替代料
AD	IRF6644TRPBF	Infineon Technologies	MOSFET/FET,IRF6644 - 12V-300V N-Channel Power MOSFET 数据手册立即购买了解更多		数据手册立即购买
对比	IRFP9230	Samsung Semiconductor	Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN	获取价格 -	请求模型数据手册替代料
对比	IRF9Z24	Samsung Semiconductor	Power Field-Effect Transistor, 9.7A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN	获取价格 -	请求模型数据手册替代料
对比	IRFU014	Samsung Semiconductor	Power Field-Effect Transistor, 8.2A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3	获取价格 -	请求模型数据手册替代料
对比	IRFS9143	Samsung Semiconductor	Power Field-Effect Transistor, 10.4A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN	获取价格 -	请求模型数据手册替代料
对比	IRF9541	Samsung Semiconductor	Power Field-Effect Transistor, 19A I(D), 60V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN	获取价格 -	请求模型数据手册替代料
对比	IRF141	Samsung Semiconductor	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	获取价格 -	请求模型数据手册替代料
对比	IRFI620A	Samsung Semiconductor	Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, I2PAK-3	获取价格 -	请求模型数据手册替代料
对比	IRFS9523	Samsung Semiconductor	Power Field-Effect Transistor, 5A I(D), 60V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN	获取价格 -	请求模型数据手册替代料
对比	IRFS9522	Samsung Semiconductor	Power Field-Effect Transistor, 5A I(D), 100V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN	获取价格 -	请求模型数据手册替代料
对比	IRF352	Samsung Semiconductor	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	获取价格 -	请求模型数据手册替代料
对比	IRF740A	Samsung Semiconductor	Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN	获取价格 -	请求模型数据手册替代料
对比	IRFR222	Samsung Semiconductor	Power Field-Effect Transistor, 3.8A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	获取价格 -	请求模型数据手册替代料
对比	IRFR024-T1	Samsung Semiconductor	Power Field-Effect Transistor, 15A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3	获取价格 -	请求模型数据手册替代料
对比	IRFR9015	Samsung Semiconductor	Power Field-Effect Transistor, 4.5A I(D), 60V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET	获取价格 -	请求模型数据手册替代料
对比	IRFWZ30	Samsung Semiconductor	Power Field-Effect Transistor, 30A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3	获取价格 -	请求模型数据手册替代料
对比	IRFS610A	Samsung Semiconductor	Power Field-Effect Transistor, 2.5A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN	获取价格 -	请求模型数据手册替代料
对比	IRF731	Samsung Semiconductor	Power Field-Effect Transistor, 5.5A I(D), 350V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN	获取价格 -	请求模型数据手册替代料
对比	IRF9612	Samsung Semiconductor	Power Field-Effect Transistor, 1.5A I(D), 200V, 4.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN	获取价格 -	请求模型数据手册替代料

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